Issue 47, 2021

Resistance of single domain walls in half-metallic CrO2 epitaxial nanostructures

Abstract

Magnetic domain structures are active electron transport agents and can be used to induce large magnetoresistance (MR), particularly in half-metallic solids. We have studied the excess resistance induced by a single magnetic domain wall in a one-dimensional half-metallic CrO2 nanoscale conductor with a built-in constriction whose channel width (d) ranges from 30 to 200 nm. We observed that the domain wall-induced MR is enhanced by 70 fold when d decreases from 200 nm to 30 nm. We speculate that the enhancement is due to the increased domain wall resistance (DWR) and the extra contribution of ballistic magnetoresistance (BMR). We have uncovered a large size effect of d on the MR induced by the domain wall, which scales with d as d−1.87±0.32. Accordingly, we predict that the MR ratio of a simple CrO2 nanowire impregnated with a constriction at a 150 nm2 cross-section could reach 100%. This large MR far exceeds that of a conventional ferromagnetic nanowire, confirming the role of half metallicity on enhanced magneto-transport.

Graphical abstract: Resistance of single domain walls in half-metallic CrO2 epitaxial nanostructures

Article information

Article type
Paper
Submitted
24 Aug 2021
Accepted
09 Nov 2021
First published
15 Nov 2021

Nanoscale, 2021,13, 20034-20040

Author version available

Resistance of single domain walls in half-metallic CrO2 epitaxial nanostructures

L. Qian, S. Zhou, K. Wang and G. Xiao, Nanoscale, 2021, 13, 20034 DOI: 10.1039/D1NR05555K

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