Issue 10, 2020

Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF2 monolayer

Abstract

Two-dimensional multiferroics, simultaneously harboring antiferromagneticity and ferroelasticity, are essential and highly sought for miniaturized device applications, such as high-density data storage, but thus far they have rarely been explored. Herein, using first principles calculations, we identified two-dimensional antiferromagnetic ferroelasticity in an AgF2 monolayer that is dynamically and thermally stable, and can be easily fabricated from its bulk. The AgF2 monolayer is an antiferromagnetic semiconductor with large spin polarization, and with great structural distortion due to its intrinsic Jahn–Teller effect when thinning the AgF2 down to a monolayer. Additionally, it features excellent ferroelasticity with high transition signal and a low switching barrier, rendering the room-temperature nonvolatile memory accessible. Such coexistence of antiferromagneticity and ferroelasticity is of great significance to the study of two-dimensional multiferroics and also renders the AgF2 monolayer a promising platform for future multifunctional device applications.

Graphical abstract: Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF2 monolayer

Supplementary files

Article information

Article type
Communication
Submitted
17 Jun 2020
Accepted
29 Jun 2020
First published
01 Jul 2020

Nanoscale Horiz., 2020,5, 1386-1393

Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF2 monolayer

X. Xu, Y. Ma, T. Zhang, C. Lei, B. Huang and Y. Dai, Nanoscale Horiz., 2020, 5, 1386 DOI: 10.1039/D0NH00362J

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