Issue 10, 2019
From the journal:

Nanoscale

GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction†

Minkyung Jung, ORCID logo *ab   Peter Rickhaus, ORCID logo ac   Simon Zihlmann, ORCID logo a   Alexander Eichler,c   Peter Makkad  and  Christian Schönenberger ORCID logo *a  

* Corresponding authors

a Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
E-mail: minkyung.jung@dgist.ac.kr, Christian.Schoenenberger@unibas.ch

b DGIST Research Institute, DGIST, Daegu 42988, Korea

c Institute for Solid State Physics, ETH Zurich, CH-8093 Zurich, Switzerland

d Department of Physics, Budapest University of Technology and Economics and Nanoelectronics Momentum Research Group of the Hungarian Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary

Abstract

We demonstrate high-frequency mechanical resonators in ballistic graphene p–n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, but still of macroscopic size with dimensions 3 × 1 μm2, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Remarkably, the resonant signals are strongly enhanced in the bipolar regime.

Graphical abstract: GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction

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Article information

DOI
https://doi.org/10.1039/C8NR09963D
Article type
Paper
Submitted
10 Dec 2018
Accepted
18 Feb 2019
First published
19 Feb 2019
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2019,11, 4355-4361

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GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction

M. Jung, P. Rickhaus, S. Zihlmann, A. Eichler, P. Makk and C. Schönenberger, Nanoscale, 2019, 11, 4355 DOI: 10.1039/C8NR09963D

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