Issue 46, 2018
From the journal:

Nanoscale

Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy†

Jian Shen,ab   Yulin Zheng,ac   Zhenzhu Xu,ac   Yuefeng Yu,ac   Fangliang Gao,acd   Shuguang Zhang, ORCID logo acd   Yang Gan ORCID logo *b  and  Guoqiang Li ORCID logo *acd  

* Corresponding authors

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
E-mail: msgli@scut.edu.cn

b School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
E-mail: ygan@hit.edu.cn

c Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province, South China University of Technology, Guangzhou 510640, China

d Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China

Abstract

A low-cost, high-efficiency, and catalyst-free method for fabricating well-aligned and uniform semipolar InGaN nanorods (NRs) by molecular beam epitaxy (MBE) is proposed using an optimized patterned sapphire substrate (PSS) with high Miller index crystallographic planes. The dense, obliquely aligned, and high-quality semipolar (1[1 with combining macron]02) InGaN NRs are fabricated on hexagonal pyramid arrays of the PSS for the first time in this work. A unique semipolar (1[1 with combining macron]02) and polar (0001) InGaN NR array composite structure is thus achieved on a hexagonal pyramid PSS. The connected, uniform, and obliquely aligned NRs are formed on the PSS with cylindrical arrays. The cylindrical and hexagonal pyramid arrays of PSSs are structured by the standard photolithography process and etching techniques. Both pattern topography and crystallographic plane of the PSS significantly affect the morphology, dimension, and crystallographic orientation of InGaN NRs. It is clearly demonstrated that the PSS with exposed high Miller index crystallographic planes, with well-organized step-terrace structures, facilitates the growth of ordered and dense semipolar InGaN NRs. This work contributes to the thorough understanding of the nucleation and growth mechanisms of InGaN NRs on a high Miller index plane of the PSS with different topographies, as well as of those of controllably fabricating dense and uniform semipolar NRs, thus facilitating the fabrication of NR-based optoelectronic devices with enhanced performance.

Graphical abstract: Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy

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Article information

DOI
https://doi.org/10.1039/C8NR07307D
Article type
Paper
Submitted
08 Sep 2018
Accepted
28 Oct 2018
First published
01 Nov 2018

Nanoscale, 2018,10, 21951-21959

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Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy

J. Shen, Y. Zheng, Z. Xu, Y. Yu, F. Gao, S. Zhang, Y. Gan and G. Li, Nanoscale, 2018, 10, 21951 DOI: 10.1039/C8NR07307D

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