Issue 29, 2018

Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6

Abstract

Valleytronics has attracted much attention due to its potential applications in the information processing industry. Creation of permanent valley polarization (PVP), i.e. unbalanced occupation at different valleys, is a vital requirement for practical devices in valleytronics. However, the development of an appropriate material with PVP remains a main challenge. Here we used first-principles calculations to predict that the spin–orbit coupling and magnetic ordering allow spontaneous valley Zeeman-type splitting in the pristine monolayer of VAgP2Se6. After suitable doping of VAgP2Se6, the Zeeman-type valley splitting results in a PVP, similar to the effect of spin polarization in spintronics. The VAgP2Se6 monolayer has nonequivalent valleys which can emit or absorb circularly polarized photons with opposite chirality. It thus shows great potential to be used as a photonic chirality filter and a circularly polarized light source. We then designed a valley pseudospin field effect transistor (VPFET) based on the monolayer VAgP2Se6, akin to the spin field effect transistors. In contrast to the current common transistors, VPFETs carry information of not only the electrons but also the valley pseudospins, far beyond common transistors.

Graphical abstract: Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6

Article information

Article type
Paper
Submitted
25 May 2018
Accepted
22 Jun 2018
First published
22 Jun 2018

Nanoscale, 2018,10, 13986-13993

Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP2Se6

Z. Song, X. Sun, J. Zheng, F. Pan, Y. Hou, M. Yung, J. Yang and J. Lu, Nanoscale, 2018, 10, 13986 DOI: 10.1039/C8NR04253E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements