Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells

Weijun Ke; Dewei Zhao; Alexander J. Cimaroli; Corey R. Grice; Pingli Qin; Qin Liu; Liangbin Xiong; Yanfa Yan; Guojia Fang

doi:10.1039/C5TA06574G

Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells†

Weijun Ke,^ab Dewei Zhao,^b Alexander J. Cimaroli,^b Corey R. Grice,^b Pingli Qin,^a Qin Liu,^a Liangbin Xiong,^a Yanfa Yan*^b and Guojia Fang*^a

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* Corresponding authors

^a Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
E-mail: gjfang@whu.edu.cn

^b Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, OH 43606, USA
E-mail: yanfa.yan@utoledo.edu

Abstract

Efficient lead halide perovskite solar cells have been realized using SnO₂ as electron selective layers (ESLs). Here, we report on the effects of the annealing temperature of solution-processed SnO₂ ESLs on the performance of perovskite solar cells. We find that the cells using low-temperature annealed SnO₂ (LT-SnO₂) ESLs outperform the cells using high-temperature annealed SnO₂ (HT-SnO₂) ESLs, exhibiting higher open circuit voltages and fill factors. Structural, electrical, optical, and electrochemical characterizations reveal the origin of the performance differences: LT-SnO₂ produces better film coverage, wider band gap, and lower electron density than that of HT-SnO₂. The confluence of these properties results in more effective transportation of electrons and blocking of holes, leading to lower interface recombination. Therefore, LT-SnO₂ ESLs are preferred for manufacturing perovskite solar cells on flexible substrates.

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DOI: https://doi.org/10.1039/C5TA06574G
Article type: Paper
Submitted: 20 Aug 2015
Accepted: 02 Nov 2015
First published: 04 Nov 2015

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J. Mater. Chem. A, 2015,3, 24163-24168

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Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells

W. Ke, D. Zhao, A. J. Cimaroli, C. R. Grice, P. Qin, Q. Liu, L. Xiong, Y. Yan and G. Fang, J. Mater. Chem. A, 2015, 3, 24163 DOI: 10.1039/C5TA06574G

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Journal of Materials Chemistry A

Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells†

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Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells

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