Issue 98, 2015
From the journal:

RSC Advances

Selective decoration of nanocrystals on single-crystalline PtTe nanowires based on a solid-state reaction†

Byeong Geun Kim,a   Jin-Hyung Leeb  and  Soon-Mok Choi*a  

* Corresponding authors

a School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan 330-708, Korea
E-mail: smchoi@koreatech.ac.kr

b Center for BioMicrosystems, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea

Abstract

In this study, we demonstrate the fabrication of single-crystalline PtTe nanowires with/without decoration of nanocrystals from different heterostructure nanowires. Sb2Te3/Pt and Te/Pt core/shell nanowires were prepared by Pt deposition on single-crystalline Sb2Te3 and Te nanowires, respectively, using a sputtering process. When Sb2Te3/Pt core/shell nanowires were annealed at 600 °C, Sb nanocrystal-decorated PtTe nanowires were fabricated by a solid-state reaction between the core Sb2Te3 nanowires and the Pt shell layers. PtTe nanowires without decoration of nanocrystals were produced by annealing Te/Pt core/shell nanowires at a temperature of 600 °C. Based on the experimental results, the comprehensive mechanism for the formation of PtTe nanowires with/without decoration of nanocrystals is discussed herein. We believe that this facile method, based on solid-state reactions, can be exploited to develop low-dimensional Te-based dichalcogenides to improve functionality in a variety of fields such as energy conversion, energy transition, superconductors and topological insulators.

Graphical abstract: Selective decoration of nanocrystals on single-crystalline PtTe nanowires based on a solid-state reaction

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Article information

DOI
https://doi.org/10.1039/C5RA13933C
Article type
Paper
Submitted
15 Jul 2015
Accepted
16 Sep 2015
First published
17 Sep 2015

RSC Adv., 2015,5, 80766-80771

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Selective decoration of nanocrystals on single-crystalline PtTe nanowires based on a solid-state reaction

B. G. Kim, J. Lee and S. Choi, RSC Adv., 2015, 5, 80766 DOI: 10.1039/C5RA13933C

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