Issue 4, 2016

Oxygen-doped porous silicon carbide spheres as electrode materials for supercapacitors

Abstract

Oxygen-containing functional groups were introduced onto the surface of the micro- and meso-porous silicon carbide sphere (MMPSiC) in order to investigate the relationship between the electric double layer properties and pseudo-capacitive properties; the degree of oxidation of MMPSiC was also optimized. Although the oxygenated surface functionalities can lead to a decrease in the surface area of MMPSiC, the oxygen functional groups attached to the external surface can participate in the redox reaction, resulting in the enhancement of the total super-capacitive performance. The MMPSiC electrode oxidized for 24 h exhibits a high charge storage capacity with a specific capacitance of 301.1 F g−1 at a scan rate of 5 mV s−1, with 86.8% rate performance from 5 to 500 mV s−1 in 1 M KCl aqueous electrolyte. This outstanding capacitive performance of the MMPSiC electrode oxidized for 24 h can be attributed to the harmonious synergistic effect between the electric double layer capacitive contribution of MMPSiC and the pseudo-capacitive contribution of the oxygen-containing functional groups. These encouraging results demonstrate that the MMPSiC electrode oxidized for 24 h is a promising candidate for high performance electrode materials for supercapacitors.

Graphical abstract: Oxygen-doped porous silicon carbide spheres as electrode materials for supercapacitors

Supplementary files

Article information

Article type
Paper
Submitted
22 Oct 2015
Accepted
21 Dec 2015
First published
22 Dec 2015

Phys. Chem. Chem. Phys., 2016,18, 3331-3338

Author version available

Oxygen-doped porous silicon carbide spheres as electrode materials for supercapacitors

M. Kim, H. Ju and J. Kim, Phys. Chem. Chem. Phys., 2016, 18, 3331 DOI: 10.1039/C5CP06438D

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