Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance

Zhimin Liang; Mingze Su; Yangyang Zhou; Li Gong; Chuanxi Zhao; Keqiu Chen; Fangyan Xie; Weihong Zhang; Jian Chen; Pengyi Liu; Weiguang Xie

doi:10.1039/C5CP05309A

Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance†

Zhimin Liang,^a Mingze Su,^a Yangyang Zhou,^a Li Gong,^b Chuanxi Zhao,^a Keqiu Chen,^a Fangyan Xie,^b Weihong Zhang,^b Jian Chen,^b Pengyi Liu^a and Weiguang Xie*^a

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* Corresponding authors

^a Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, P. R. China
E-mail: wgxie@email.jnu.edu.cn

^b Instrumental Analysis & Research Center, Sun Yat-sen University, Guangzhou, P. R. China

Abstract

The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO_3−x, V₂O_5−x, WO_3−x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO_3−x, to V₂O_5−x, and to WO_3−x. The reaction causes the surface oxidation of silicon for faster electron/hole recombination, and the reduction of TMO for effective hole collection. The photovoltaic performance of the Si/TMO heterojunction devices is affected by the interface reaction. MoO_3−x are the best hole selecting materials that induce least surface oxidation but strongest reduction. Compared with H-passivation, methyl group passivation is an effective way to reduce the interface reaction and improve the interfacial energy level alignment for better electron and hole collection.

Physical Chemistry Chemical Physics

Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance†

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Interaction at the silicon/transition metal oxide heterojunction interface and its effect on the photovoltaic performance

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