Issue 7, 2013
From the journal:

Nanoscale

Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

Ji-Hyeon Park,a   Min-Hee Kim,a   Suthan Kissingerb  and  Cheul-Ro Lee*a  

* Corresponding authors

a Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju, South Korea
E-mail: crlee7@jbnu.ac.kr
Fax: +82-63-270-2305
Tel: +82-63-270-2304

b Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail-10074, Saudi Arabia

Abstract

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300–400 nm with a density of 6–7 × 107 cm−2. The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current–voltage (I–V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

Graphical abstract: Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

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Article information

DOI
https://doi.org/10.1039/C3NR34245J
Article type
Paper
Submitted
22 Dec 2012
Accepted
22 Jan 2013
First published
29 Jan 2013

Nanoscale, 2013,5, 2959-2966

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Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

J. Park, M. Kim, S. Kissinger and C. Lee, Nanoscale, 2013, 5, 2959 DOI: 10.1039/C3NR34245J

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