Issue 14, 2013

An energy-harvesting scheme employing CuGaSe2quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic–organic hybrid solar cells

Abstract

We demonstrated a promising route to enhance the performance of inverted organic photovoltaic (OPV) devices by the incorporation of CuGaSe2 (CGS) quantum dots (QDs) into the ZnO buffer layer of P3HT:PCBM-based devices. The modification of QDs provides better band alignment between the organic/cathode interface, improves ZnO crystal quality, and increases photon absorption, leading to more effective carrier transport/collection. By employing this energy-harvesting scheme, short-circuit current density, open-circuit voltage, and fill factor of the OPV device after CGS QD modification are improved by 9.43%, 7.02% and 6.31%, respectively, giving rise to a 23.8% enhancement in the power conversion efficiency.

Graphical abstract: An energy-harvesting scheme employing CuGaSe2 quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic–organic hybrid solar cells

Supplementary files

Article information

Article type
Paper
Submitted
17 Dec 2012
Accepted
30 Jan 2013
First published
08 Feb 2013

Nanoscale, 2013,5, 6350-6355

An energy-harvesting scheme employing CuGaSe2 quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic–organic hybrid solar cells

C. Ho, M. Tsai, H. Jhuo, D. Lien, C. Lin, S. Tsai, T. Wei, K. Huang, S. Chen and J. He, Nanoscale, 2013, 5, 6350 DOI: 10.1039/C3NR34155K

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