Issue 4, 2012
From the journal:

Nanoscale

Size-suppressed dielectrics of Ge nanocrystals: skin-deep quantum entrapment

Eunice S. M. Goh,*ab   T. P. Chen,a   H. Y. Yang,b   Y. Liuc  and  C. Q. Suna  

* Corresponding authors

a School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
E-mail: e070032@e.ntu.edu.sg

b Pillar of Engineering Product Development, Singapore University of Technology and Design, Singapore

c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, People's Republic of China

Abstract

Although the dielectric behavior of nanostructured semiconductors has been intensively investigated, the physics behind observations remains disputed with possible mechanisms such as quantum confinement and dangling bond polarization. Here we show that theoretical reproduction of the measured dielectric suppression of Ge nanocrystals asserts that the dielectric suppression originates from the shorter and stronger bonds at the skin-deep surface, the associated local densification and quantum entrapment of energy. Coordination-imperfection induced local quantum entrapment perturbs the Hamiltonian that determines the band gap and hence, the process of electron polarization consequently.

Graphical abstract: Size-suppressed dielectrics of Ge nanocrystals: skin-deep quantum entrapment

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Article information

DOI
https://doi.org/10.1039/C2NR11154C
Article type
Paper
Submitted
23 Aug 2011
Accepted
09 Dec 2011
First published
25 Jan 2012

Nanoscale, 2012,4, 1308-1311

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Size-suppressed dielectrics of Ge nanocrystals: skin-deep quantum entrapment

E. S. M. Goh, T. P. Chen, H. Y. Yang, Y. Liu and C. Q. Sun, Nanoscale, 2012, 4, 1308 DOI: 10.1039/C2NR11154C

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