Issue 47, 2012
From the journal:

Journal of Materials Chemistry

Novel triethylsilylethynyl anthracene-based organic semiconductors for high performance field effect transistors†

Hui-Jun Yun,a   Dae Sung Chung,*b   Il Kang,a   Jong Won Park,a   Yun-Hi Kim*c  and  Soon-Ki Kwon*a  

* Corresponding authors

a School of Materials Science & Engineering and Research Institute (ERI), Gyeongsang National University, Jinju, South Korea 660-701
E-mail: skwon@gnu.ac.kr

b Department of Chemical Engineering, Dong-A University, Busan, Korea
E-mail: dchung@dau.ac.kr

c Department of Chemistry, Research Institute of Natural Science (RINS), Gyeongsang National University, Jinju, South Korea 660-701
E-mail: ykim@gnu.ac.kr

Abstract

A series of triethylsilylethynyl anthracene (TESAN) derivatives, end-capped with bithiophene and thienothiophene, were synthesized by Suzuki coupling. The thermal, optical, electrochemical, and crystalline properties of the TESAN derivatives were reported and correlated with charge transport behavior measured via both a thin film transistor and a single crystal transistor. The TESAN derivative substituted with bithiophene exhibited more efficient π electron delocalization over the molecule compared to the derivative substituted with fused thienothiophene, and consequently gave the highest FET mobility, 1.28 cm2 V−1 s−1, from single crystal transistors with negligible hysteresis and almost zero turn-on voltage. The discrepancy of charge carrier mobility between the thin film transistor and single crystal transistor and the solvent annealing effects are discussed in conjunction with morphological and structural analyses.

Graphical abstract: Novel triethylsilylethynyl anthracene-based organic semiconductors for high performance field effect transistors

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Article information

DOI
https://doi.org/10.1039/C2JM34160C
Article type
Paper
Submitted
27 Jun 2012
Accepted
01 Oct 2012
First published
01 Oct 2012

J. Mater. Chem., 2012,22, 24924-24929

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Novel triethylsilylethynyl anthracene-based organic semiconductors for high performance field effect transistors

H. Yun, D. S. Chung, I. Kang, J. W. Park, Y. Kim and S. Kwon, J. Mater. Chem., 2012, 22, 24924 DOI: 10.1039/C2JM34160C

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