Issue 3, 2013
From the journal:

Physical Chemistry Chemical Physics

Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors†

Kwang-Suk Jang,*a   Won Soo Kim,a   Jong-Myung Won,a   Yun-Ho Kim,a   Sung Myung,a   Jae-Won Ka,a   Jinsoo Kim,a   Taek Ahnb  and  Mi Hye Yi*a  

* Corresponding authors

a Division of Advanced Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600, Republic of Korea
E-mail: kjang@krict.re.kr, mhyi@krict.re.kr

b Department of Chemistry, Kyungsung University, 314-79 Daeyeon-dong, Nam-gu, Busan 608-736, Republic of Korea

Abstract

The surface property of a polyimide gate insulator was successfully modified with an n-octadecyl side-chain. Alkyl chain-grafted poly(amic acid), the polyimide precursor, was synthesized using the diamine comonomer with an alkyl side-chain. By adding a base catalyst to the poly(amic acid) coating solution, the imidization temperature of the spin-coated film could be reduced to 200 °C. The 350 nm-thick polyimide film had a dielectric constant of 3.3 at 10 kHz and a leakage current density of less than 8.7 × 10−10 A cm−2, while biased from 0 to 100 V. To investigate the potential of the alkyl chain-grafted polyimide film as a gate insulator for solution-processed organic thin-film transistors (TFTs), we fabricated C10-BTBT TFTs. C10-BTBT was deposited on the alkyl chain-grafted polyimide gate insulator by spin-coating, forming a well-ordered crystal structure. The field-effect mobility and the on/off current ratio of the TFT device were measured to be 0.20–0.56 cm2 V−1 s−1 and >105, respectively.

Graphical abstract: Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors

About
Cited by
Related
Download options Please wait...

Supplementary files

Article information

DOI
https://doi.org/10.1039/C2CP43529B
Article type
Paper
Submitted
08 Oct 2012
Accepted
13 Nov 2012
First published
14 Nov 2012

Phys. Chem. Chem. Phys., 2013,15, 950-956

Permissions

Request permissions

Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors

K. Jang, W. S. Kim, J. Won, Y. Kim, S. Myung, J. Ka, J. Kim, T. Ahn and M. H. Yi, Phys. Chem. Chem. Phys., 2013, 15, 950 DOI: 10.1039/C2CP43529B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements