Issue 6, 2012
From the journal:

Journal of Materials Chemistry

Dielectric behavior of self-assembled monolayers on conducting metal oxides†

Oktay Yildirim,ab   Peter J. de Veen,a   Michiel G. Maas,a   Minh D. Nguyen,a   David N. Reinhoudt,b   Dave H. A. Blank,a   Guus Rijnders*a  and  Jurriaan Huskens*b  

* Corresponding authors

a Inorganic Materials Science, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, The Netherlands
E-mail: a.j.h.m.rijnders@utwente.nl
Fax: +31 53 4893595
Tel: +31 53 4892618

b Molecular Nanofabrication Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, The Netherlands
E-mail: j.huskens@utwente.nl
Fax: +31 53 4894645
Tel: +31 53 4892995

Abstract

Pt top contacts have been deposited by pulsed laser deposition (PLD) onto bare and tetradecylphosphate (TDP) self-assembled monolayer (SAM)-modified Nb-doped SrTiO3 (Nb-STO) substrates. For the SAM-modified substrates, electrochemical Cu deposition occurred only at the places where electrical shorts existed between the top contact and the substrate. A nearly perfect yield of top contacts without shorts was obtained, which shows the dense packing and robustness of the SAM. The SAM decreased the leakage current about 500 times compared to the bare substrate. Alkylphosphate SAMs on conducting metal oxide substrates can therefore be used as dielectric thin films for device fabrication.

Graphical abstract: Dielectric behavior of self-assembled monolayers on conducting metal oxides

About
Cited by
Related
Download options Please wait...

Supplementary files

Article information

DOI
https://doi.org/10.1039/C1JM15061H
Article type
Paper
Submitted
07 Oct 2011
Accepted
27 Oct 2011
First published
22 Nov 2011

J. Mater. Chem., 2012,22, 2405-2409

Permissions

Request permissions

Dielectric behavior of self-assembled monolayers on conducting metal oxides

O. Yildirim, P. J. de Veen, M. G. Maas, M. D. Nguyen, D. N. Reinhoudt, D. H. A. Blank, G. Rijnders and J. Huskens, J. Mater. Chem., 2012, 22, 2405 DOI: 10.1039/C1JM15061H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements