Issue 8, 2010
From the journal:

Chemical Communications

A new system for synthesis of high quality nonpolar GaN thin films†

Guoqiang Li,*ab   Shao-Ju Shiha  and  Zhengyi Fub  

* Corresponding authors

a Department of Materials, University of Oxford, Parks Road, Oxford, UK
E-mail: guoqiang.li@materials.ox.ac.uk, or, guoqiang.lee@gmail.com

b Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

Abstract

High quality nonpolar m-plane GaN films were successfully grown on LiGaO2 (100) substrates for the first time. This m-plane GaN/LiGaO2 (100) system opens a new approach for realizing highly-efficient nitride devices.

Graphical abstract: A new system for synthesis of high quality nonpolar GaN thin films

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Article information

DOI
https://doi.org/10.1039/B919722B
Article type
Communication
Submitted
22 Sep 2009
Accepted
17 Nov 2009
First published
10 Dec 2009

Chem. Commun., 2010,46, 1206-1208

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A new system for synthesis of high quality nonpolar GaN thin films

G. Li, S. Shih and Z. Fu, Chem. Commun., 2010, 46, 1206 DOI: 10.1039/B919722B

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