Issue 7, 2009
From the journal:

Journal of Materials Chemistry

Alternative catalysts for VSS growth of silicon and germanium nanowires†

Jessica L. Lensch-Falk,a   Eric R. Hemesath,a   Daniel E. Pereaa  and  Lincoln J. Lauhon*a  

* Corresponding authors

a Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
E-mail: Lauhon@northwestern.edu
Fax: +1-847-491-7820
Tel: +1-847-491-2232

Abstract

Metal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solid-solid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.

Graphical abstract: Alternative catalysts for VSS growth of silicon and germanium nanowires

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Article information

DOI
https://doi.org/10.1039/B817391E
Article type
Feature Article
Submitted
06 Oct 2008
Accepted
19 Nov 2008
First published
07 Jan 2009

J. Mater. Chem., 2009,19, 849-857

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Alternative catalysts for VSS growth of silicon and germanium nanowires

J. L. Lensch-Falk, E. R. Hemesath, D. E. Perea and L. J. Lauhon, J. Mater. Chem., 2009, 19, 849 DOI: 10.1039/B817391E

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