Issue 33, 2006
From the journal:

Physical Chemistry Chemical Physics

Supported phospholipid bilayer formation on hydrophilicity-controlled silicon dioxide surfaces

Ryugo Tero,*a   Hidekazu Watanabeb  and  Tsuneo Urisu*a  

* Corresponding authors

a Chemical Dynamics Laboratory, Institute for Molecular Science, Myodaiji, Okazaki, Japan
E-mail: tero@ims.ac.jp, urisu@ims.ac.jp

b Molecular Spectroscopy Laboratory, RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama, Japan

Abstract

We investigated the influence of surface hydroxyl groups (–OHs) on the supported planar phospholipid bilayer (SPB) formation and characteristics. We prepared SiO2 surfaces with different hydrophilicity degree by annealing the SiO2 layer on Si(100) formed by wet chemical treatments. The hydrophilicity reduced with irreversible thermal desorption of –OHs. We formed SPB of dimyristoylphosphatidylcholine on the SiO2 surfaces by incubation at a 100-nm-filtered vesicle suspension. The formation rate was faster on less hydrophilic surfaces. We proposed that a stable hydrogen-bonded water layer on the SiO2 surface worked as a barrier to prevent vesicle adhesion on the surface. Theoretical calculation indicates that water molecules on vicinal surface –OHs take a stable surface-unique geometry, which disappears on an isolated –OH. The surface –OH density, however, affected little the fluidity of once formed SPBs, which was measured by the fluorescence recovery after the photobleaching method. We also describe the area-selective SPB deposition using surface patterning by the focused ion beam.

Graphical abstract: Supported phospholipid bilayer formation on hydrophilicity-controlled silicon dioxide surfaces

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Article information

DOI
https://doi.org/10.1039/B606052H
Article type
Paper
Submitted
28 Apr 2006
Accepted
06 Jul 2006
First published
21 Jul 2006

Phys. Chem. Chem. Phys., 2006,8, 3885-3894

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Supported phospholipid bilayer formation on hydrophilicity-controlled silicon dioxide surfaces

R. Tero, H. Watanabe and T. Urisu, Phys. Chem. Chem. Phys., 2006, 8, 3885 DOI: 10.1039/B606052H

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