Issue 23, 2018
From the journal:

Nanoscale

Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer†

Wenyu Ji, ORCID logo *a   Huaibin Shen, ORCID logo *b   Han Zhang,a   Zhihui Kanga  and  Hanzhuang Zhang*a  

* Corresponding authors

a Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, 130023, China
E-mail: jiwy@jlu.edu.cn, zhanghz@jlu.edu.cn

b Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China
E-mail: shenhuaibin@henu.edu.cn

Abstract

The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and lower cost than their organic counterparts. We achieve here an all-inorganic QLED with excellent efficiency by modifying the solution-processed NiO (s-NiO) surface with an ultrathin Al2O3 passivating layer. Both transient resolution photoluminescence and X-ray photoelectron spectroscopy measurements demonstrate that the Al2O3 layer can effectively passivate NiOOH on the s-NiO surface, thereby suppressing exciton quenching. This improves the highest efficiency of the QLED without an Al2O3 layer by over 800% to a current efficiency (external quantum efficiency) of 34.1 cd A−1 (8.1%), making it the best-performing all-inorganic QLED.

Graphical abstract: Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer

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Article information

DOI
https://doi.org/10.1039/C8NR01460D
Article type
Paper
Submitted
20 Feb 2018
Accepted
28 May 2018
First published
28 May 2018

Nanoscale, 2018,10, 11103-11109

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Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer

W. Ji, H. Shen, H. Zhang, Z. Kang and H. Zhang, Nanoscale, 2018, 10, 11103 DOI: 10.1039/C8NR01460D

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