C-Axis oriented crystalline IGZO thin-film transistors by magnetron sputtering

Junpeng Zhang; Xizhang Wen; Luyao Hu; Wangying Xu; Deliang Zhu; Peijiang Cao; Wenjun Liu; Shun Han; Xinke Liu; Fang Jia; Yuxiang Zeng; Youming Lu

doi:10.1039/C7TC00193B

C-Axis oriented crystalline IGZO thin-film transistors by magnetron sputtering†

Junpeng Zhang,^a Xizhang Wen,^a Luyao Hu,^a Wangying Xu,

*^a Deliang Zhu,*^a Peijiang Cao,^a Wenjun Liu,^a Shun Han,^a Xinke Liu,^a Fang Jia,^a Yuxiang Zeng^a and Youming Lu^a

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* Corresponding authors

^a Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
E-mail: wyxu@szu.edu.cn, dlzhu@szu.edu.cn

Abstract

We demonstrate the direct formation of c-axis oriented crystalline IGZO thin films at room temperature by magnetron sputtering. The influence of processing parameters such as oxygen partial pressure, post-annealing temperature and channel thickness on the electrical performance of IGZO films and thin-film transistors (TFTs) was intensively investigated. The as-deposited crystalline IGZO TFTs exhibited a mobility of 4.49 cm² V⁻¹ s⁻¹ and an on/off ratio of 2.08 × 10⁷. For the annealed device, a high mobility of 10.51 cm² V⁻¹ s⁻¹, a subthreshold swing of 0.672 V decade⁻¹, a threshold voltage of 0.38 V, as well as an on/off current ratio of ∼10⁸ are achieved with an annealing temperature of 400 °C. These results present a significant step towards the development of high-performance TFTs using oriented crystalline IGZO.

Journal of Materials Chemistry C

C-Axis oriented crystalline IGZO thin-film transistors by magnetron sputtering†

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C-Axis oriented crystalline IGZO thin-film transistors by magnetron sputtering

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