Gate modulated and enhanced optoelectronic performance of MoSe2 and CVD-grown MoS2 heterojunctions
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Abstract
Van der Waals heterojunctions, stacked with different two-dimensional materials, have enabled novel optoelectronic functionalities with high performances for various applications such as in photodetectors, solar cells and light-emitting diodes. Herein, we fabricated MoSe2 and CVD-grown MoS2 heterojunctions with significant gate modulated photovoltaic effect with an open-circuit voltage of 0.16 V and power conversion efficiency of ∼0.5% due to the type-II band alignment and gate tunable band slope. Moreover, the photo-responsivity was dramatically improved to ∼350 A W−1, which is two orders of magnitude larger than that of the isolated components (MoSe2 or MoS2), and the temporal response was as fast as ∼10 ms at negative back gate. All these results indicate the vast potential applications of heterojunctions, with facile procedure, in photovoltaic cells and photodetectors.
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