Issue 61, 2017

Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

Abstract

Pr3+/Cd2+ co-doped ZnO hexagonal structure thin films with c-axis preferred orientation were deposited on Pt/Ti/SiO2/Si substrates using a chemical solution deposition method, and the effect of Cd-ion doping on the resistive switching properties of Zn0.97−xPr0.03CdxO thin films (x = 0, 0.02, 0.04, and 0.06) has been investigated. The results showed that Cd-doping improved the resistive switching properties of the Pt/Zn0.97−xPr0.03CdxO/Pt devices. The resistive switching devices exhibited good endurance, long retention, and uniform switching voltages. The resistive switching characteristics also show a good temperature stability beneficial for further device applications. The IV characteristics and their temperature dependence analysis indicated that the conduction mechanism was ohmic conduction behavior for the low resistance state and at low voltage region for the high resistance state, whereas the conduction mechanism at relatively higher voltage for the high resistance state is trap-controlled space charge limited current. The resistive switching process has been explained using a conductive filament-related formation/rupture mechanism considering the thermal effects and the migration of oxygen vacancies. The reasons for the improvement of resistive switching performance through Cd ion doping, were attributed to the decrease of the band gap and the control of oxygen vacancies.

Graphical abstract: Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

Article information

Article type
Paper
Submitted
27 Jun 2017
Accepted
02 Aug 2017
First published
09 Aug 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 38757-38764

Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

S. He, A. Hao, N. Qin and D. Bao, RSC Adv., 2017, 7, 38757 DOI: 10.1039/C7RA07100K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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