Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

Tiina Sarnet; Timo Hatanpää; Mikko Laitinen; Timo Sajavaara; Kenichiro Mizohata; Mikko Ritala; Markku Leskelä

doi:10.1039/C5TC03079J

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Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et₃Si)₃As through the GaAs process

Tiina Sarnet,*^a Timo Hatanpää,^a Mikko Laitinen,^b Timo Sajavaara,^b Kenichiro Mizohata,^c Mikko Ritala^a and Markku Leskelä^a

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* Corresponding authors

^a Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, Finland
E-mail: tiina.sarnet@helsinki.fi
Tel: +358 2941 50220

^b Department of Physics, University of Jyväskylä, Finland

^c Division of Material Physics, Department of Physics, University of Helsinki, Finland

Abstract

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl₃ and (Et₃Si)₃As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD window.

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DOI: https://doi.org/10.1039/C5TC03079J
Article type: Paper
Submitted: 26 Sep 2015
Accepted: 02 Dec 2015
First published: 15 Dec 2015

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J. Mater. Chem. C, 2016,4, 449-454

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Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et₃Si)₃As through the GaAs process

T. Sarnet, T. Hatanpää, M. Laitinen, T. Sajavaara, K. Mizohata, M. Ritala and M. Leskelä, J. Mater. Chem. C, 2016, 4, 449 DOI: 10.1039/C5TC03079J

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Journal of Materials Chemistry C

Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et₃Si)₃As through the GaAs process

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Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et₃Si)₃As through the GaAs process

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