SCHEDULED MAINTENANCE
Electronic transport properties of in-plane heterostructures constructed by MoS2 and WS2 nanoribbons†
Abstract
A new and simple kind of in-plane heterostructure is constructed by MoS2 nanoribbons (MoS2NRs) and WS2 nanoribbons (WS2NRs) arranged both perpendicularly and in parallel. The electronic transport properties of two-probe devices with these heterostructures are investigated by first-principle density functional theory and non-equilibrium Green function. The results indicate that for all these heterostructures, with the number of WS2NR unit cell increasing, the bandgap decreases slightly and the negative differential resistance (NDR) effect can be tuned. Especially for the case with W atoms doping on the edge, it not only displays a notable NDR effect but also has a high current peak under low bias, which indicates that it shows a better performance applied as a logic transistor. This study may provide a new path for the creation of the novel nanoelectronic devices with good performance.
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