Properties of HfO2/La2O3 nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition

Duo Cao; Xinhong Cheng; Yahong Xie; Xiaolong Li; Zhongjian Wang; Chao Xia; Li Zheng; Dawei Xu; Lingyan Shen; Yuehui Yu

doi:10.1039/C4RA06542E

Properties of HfO₂/La₂O₃ nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition

Duo Cao,^a Xinhong Cheng,*^a Yahong Xie,^b Xiaolong Li,^c Zhongjian Wang,^a Chao Xia,^a Li Zheng,^a Dawei Xu,^a Lingyan Shen^a and Yuehui Yu^a

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* Corresponding authors

^a State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, P. R. China
E-mail: xh_cheng@mail.sim.ac.cn

^b Department of Materials Science and Engineering, University of California Los Angeles, California 90095, USA

^c Shanghai Synchrotron Radiation Facility, Zhangheng Road 239, Shanghai 200061, P. R. China

Abstract

HfO₂/La₂O₃ nanolaminate (HLOL) films were grown on AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition (PEALD). After high-temperature rapid thermal annealing (RTA), the properties of the films were characterized. Si (coming from the La₂O₃ metal precursor) and La atoms diffuse into the HfO₂ layer, cubic and tetragonal phase HfO₂ exist in the HLOL film. The HLOL film has an effective dielectric constant of 35.7 and a breakdown electric field of 5.5 MV cm⁻¹. Moreover, the HLOL film is an effective barrier to suppress the gate leakage current, which is 5 orders of magnitude lower compared to a conventional Schottky diode. The HLOL dielectric film on AlGaN/GaN could also improve the gate voltage swing range.

RSC Advances

Properties of HfO₂/La₂O₃ nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition

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Properties of HfO₂/La₂O₃ nanolaminate films grown on an AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition

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