Issue 14, 2015
From the journal:

Nanoscale

Defect/oxygen assisted direct write technique for nanopatterning graphene†

Alberto Cagliani,*a   Niclas Lindvall,b   Martin Benjamin Barbour Spanget Larsen,a   David M. A. Mackenzie,a   Bjarke Sørensen Jessen,a   Timothy J. Bootha  and  Peter Bøggild*a  

* Corresponding authors

a DTU Nanotech—Center for Nanostructured Graphene, Technical University of Denmark, Building 345 East, DK-2800 Kgs. Lyngby, Denmark
E-mail: Alberto.Cagliani@nanotech.dtu.dk, Peter.Boggild@nanotech.dtu.dk

b Department of Microtechnology and Nanoscience – Chalmers University of Technology, SE-41296 Gothenburg, Sweden

Abstract

High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.

Graphical abstract: Defect/oxygen assisted direct write technique for nanopatterning graphene

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Article information

DOI
https://doi.org/10.1039/C4NR07585D
Article type
Paper
Submitted
23 Dec 2014
Accepted
04 Mar 2015
First published
06 Mar 2015
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2015,7, 6271-6277

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Defect/oxygen assisted direct write technique for nanopatterning graphene

A. Cagliani, N. Lindvall, M. B. B. S. Larsen, D. M. A. Mackenzie, B. S. Jessen, T. J. Booth and P. Bøggild, Nanoscale, 2015, 7, 6271 DOI: 10.1039/C4NR07585D

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