Issue 45, 2013

Inkjet printing of palladium source and drain electrodes on individual single-wall carbon nanotubes to fabricate field effect transistors

Abstract

Field effect transistors (FETs) have been fabricated on individual single-wall carbon nanotubes by inkjet printing of source and drain electrodes using palladium nanoparticles. The FETs display p-type semiconducting characteristics, whereas subsequent thermal annealing shows that both hole-doping and Schottky contacts have an influence on the electrical transport. The data show that inkjet printing is a viable tool for the facile fabrication of single-tube nanoelectronics.

Graphical abstract: Inkjet printing of palladium source and drain electrodes on individual single-wall carbon nanotubes to fabricate field effect transistors

Article information

Article type
Paper
Submitted
26 Jul 2013
Accepted
25 Sep 2013
First published
30 Sep 2013

RSC Adv., 2013,3, 23658-23663

Inkjet printing of palladium source and drain electrodes on individual single-wall carbon nanotubes to fabricate field effect transistors

K. Yang, L. Huang, Y. Liu, C. Xu, Y. Bai, S. Huang, Z. Yang, Z. Xu and H. Wang, RSC Adv., 2013, 3, 23658 DOI: 10.1039/C3RA43922D

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