Issue 31, 2012
From the journal:

RSC Advances

Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films†

Manoj Narayanan,*a   Mengchun Pan,b   Shanshan Liu,a   Sheng Tong,c   Seungbum Hong,‡*bd   Beihai Maa  and  Uthamalingam Balachandrana  

* Corresponding authors

a Energy Systems Division, Argonne National Laboratory, Argonne, IL, USA
E-mail: mnarayanan@anl.gov

b Materials Science Division, Argonne National Laboratory, Argonne, IL, USA
E-mail: hong@anl.gov

c College of Engineering and Applied Science, University of Cincinnati, Cincinnati, OH, USA

d Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, USA

Abstract

The effect of ferroelastic coupling in ferroelectric thin films under in-plane compressive and tensile stress states was investigated under the framework of the Landau–Ginzburg–Devonshire theory coupled with microscopic examinations and characterization measurements. Piezoresponse force microscopy imaging and synchrotron studies suggested the presence of increased c-domain population in PLZT films (Pb0.92La0.08Zr0.52Ti0.48O3) under compressive stress than tensile stress. Stress-induced ferroelectric order (SFO) persisted in PLZT films at temperatures greater than the Curie temperature. The SFO was dependent on the magnitude of the stress, not the stress state, and PLZT films on nickel and silicon substrates exhibited stress-induced remanent polarization values of 8 μC cm−2 and 4 μC cm−2, respectively. Pre-stressing thin films using thermal expansion mismatch shows promise as a method to develop high-temperature piezoelectric devices and has advantages over inducing misfit strains.

Graphical abstract: Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films

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Article information

DOI
https://doi.org/10.1039/C2RA20678A
Article type
Paper
Submitted
13 Apr 2012
Accepted
03 Oct 2012
First published
29 Oct 2012

RSC Adv., 2012,2, 11901-11907

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Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films

M. Narayanan, M. Pan, S. Liu, S. Tong, S. Hong, B. Ma and U. Balachandran, RSC Adv., 2012, 2, 11901 DOI: 10.1039/C2RA20678A

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