Issue 30, 2012
From the journal:

RSC Advances

Rectifying behaviors of an Au/(C20)2/Au molecular device induced by the different positions of gate voltage

Guomin Ji,a   Yuqing Xu,a   Bin Cui,a   Changfeng Fang,b   Xiangru Kong,a   Dongmei Lia  and  Desheng Liu*ac  

* Corresponding authors

a School of Physics, State Key Laboratory of Crystal Materials, Shandong, University, Jinan 250100, People's Republic of China

b Division of Computational Physics IFM, Linköping University, Linköping, SE-581 83, Sweden

c Department of Physics, Jining University, Qufu 273155, People's Republic of China
E-mail: liuds@sdu.edu.cn

Abstract

The electronic transport properties of a gated Au/(C20)2/Au molecular device are studied using nonequilibrium Green's function in combination with density functional theory. The results show that different applied positions of the external transverse gate voltage can effectively tune the current–voltage (I–V) characteristic of molecular devices. Rectifying behaviors of the device can be realized when the gate voltage is applied asymmetrically on the left C20 molecule, and the rectification directions can also be modulated by the positive or negative value of the gate voltage. These results provide an important theoretical support to experiments and the design of a molecular rectifier.

Graphical abstract: Rectifying behaviors of an Au/(C20)2/Au molecular device induced by the different positions of gate voltage

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Article information

DOI
https://doi.org/10.1039/C2RA21146G
Article type
Paper
Submitted
07 Jun 2012
Accepted
14 Sep 2012
First published
20 Sep 2012

RSC Adv., 2012,2, 11349-11353

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Rectifying behaviors of an Au/(C20)2/Au molecular device induced by the different positions of gate voltage

G. Ji, Y. Xu, B. Cui, C. Fang, X. Kong, D. Li and D. Liu, RSC Adv., 2012, 2, 11349 DOI: 10.1039/C2RA21146G

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