Issue 13, 2012
From the journal:

Journal of Materials Chemistry

Self-assembly of reduced graphene oxide at liquid–air interface for organic field-effect transistors†

Shendong Ren,a   Rongjin Li,a   Xiangjian Mengb  and  Hongxiang Li*a  

* Corresponding authors

a Laboratory of Material Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai, China
E-mail: lhx@sioc.ac.cn
Fax: +86-021-64166128
Tel: +86-021-54925024

b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

Abstract

A new method to prepare reduced graphene oxide (RGO) films was reported. In this method, RGO thin films can be prepared for large areas with controllable thickness and high temperature (>500 °C) is not required. The applications of RGO thin films as electrodes of organic field-effect transistors (OFETs) were investigated by bottom-contact p- and n-channel OFETs using copper phthalocyanine and copper hexadecafluorophthalocyanine as semiconductors. Transistor characterization showed the RGO electrode devices displayed higher mobilities than similar OFETs with Au electrodes, suggesting RGO is a good candidate for OFET electrodes.

Graphical abstract: Self-assembly of reduced graphene oxide at liquid–air interface for organic field-effect transistors

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Article information

DOI
https://doi.org/10.1039/C2JM16232F
Article type
Paper
Submitted
29 Nov 2011
Accepted
23 Jan 2012
First published
06 Mar 2012

J. Mater. Chem., 2012,22, 6171-6175

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Self-assembly of reduced graphene oxide at liquid–air interface for organic field-effect transistors

S. Ren, R. Li, X. Meng and H. Li, J. Mater. Chem., 2012, 22, 6171 DOI: 10.1039/C2JM16232F

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