Issue 34, 2012
From the journal:

Journal of Materials Chemistry

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

Jing Li,a   Haizheng Zhong,c   Huijuan Liu,a   Tianyou Zhai,*bc   Xi Wang,c   Meiyong Liao,c   Yoshio Bando,c   Ruibin Liua  and  Bingsuo Zou*a  

* Corresponding authors

a Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Micro-Nano Technology Center, Beijing Institute of Technology, Zhongguancun South Street No.5, Beijing, China
E-mail: zoubs@bit.edu.cn

b Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
E-mail: zhai.tianyou@gmail.com

c International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
E-mail: zhai.tianyou@gmail.com

Abstract

Ternary Cu–Bi–S based compounds have been thought to be alternative materials for well-known CuInS2 because of their abundance. Cu–Bi–S based nanomaterials have been less studied. We here report the synthesis, optical and electrical properties of single crystal Cu4Bi4S9 nanowires. High-quality Cu4Bi4S9 nanowires were synthesized through a modified solvothermal route by controlling the reaction sources and temperature. The optical bandgap for Cu4Bi4S9 nanowires were determined by using UV-vis-NIR and cyclic voltammetry techniques. Single nanowire devices were fabricated by using lithographic techniques. The devices exhibit photoconductive response with high external quantum efficiency (2.9 × 108%). Temperature-dependent electrical transport properties were also investigated. We observed that the transport properties of Cu4Bi4S9 nanowire show typical semiconductor behaviour in the temperature region 10–140 K and metal-like character in the temperature region of 150–300 K. The carrier transport in Cu4Bi4S9 nanowires can be described by the small polaron model in temperature region of 60–140 K and the variable range hopping mechanism in temperature region of 10–50 K. We further studied the properties of Cu4Bi4S9 nanowires in field-emission devices. The devices exhibit a relatively low turn-on field (6.9 V μm−1). The potential applications of Cu4Bi4S9 nanowires as field emitting materials and light absorbers in detectors are indicated.

Graphical abstract: One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

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Article information

DOI
https://doi.org/10.1039/C2JM33606E
Article type
Paper
Submitted
05 Jun 2012
Accepted
05 Jul 2012
First published
06 Jul 2012

J. Mater. Chem., 2012,22, 17813-17819

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One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

J. Li, H. Zhong, H. Liu, T. Zhai, X. Wang, M. Liao, Y. Bando, R. Liu and B. Zou, J. Mater. Chem., 2012, 22, 17813 DOI: 10.1039/C2JM33606E

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