Issue 2, 2012
From the journal:

Journal of Materials Chemistry

Anodic formation of nanoporous and nanotubular metal oxides†

Zixue Su,a   Wuzong Zhou,*b   Feilong Jianga  and  Maochun Hong*a  

* Corresponding authors

a Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, China
E-mail: hmc@fjirsm.ac.cn

b EaStCHEM, School of Chemistry, University of St. Andrews, St. Andrews, Fife, United Kingdom
E-mail: wzhou@st-andrews.ac.uk

Abstract

A localized dielectric breakdown model with good universality is introduced to explain the pore initiation, separation and growth processes of nanoporous and nanotubular anodic metal oxides. It is suggested that the degree of localized dielectric breakdown, which is mainly determined by the dielectric strength and energy band gap of the anodic oxide, electrolyte used, anodizing field and also temperature during anodization, has a significant effect on the pore formation. Continuous nanoporous films tend to grow under low degree of localized dielectric breakdown of the anodic oxides, and the growth in number and size of voids induced by high degree of localized dielectric breakdown at the inter-pore areas leads to the separation of neighbouring pores and, therefore, formation of nanotubular structures. Specially, anodic TiO2 nanotubes are believed to grow by continuous localized dielectric breakdown and self-healing processes at the base of main pores. Alternating dielectric breakdown and oxidation processes at the inter-pores areas lead to the formation of commonly observed O-ring like ridges.

Graphical abstract: Anodic formation of nanoporous and nanotubular metal oxides

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Article information

DOI
https://doi.org/10.1039/C1JM13338A
Article type
Paper
Submitted
15 Jul 2011
Accepted
30 Sep 2011
First published
04 Nov 2011

J. Mater. Chem., 2012,22, 535-544

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Anodic formation of nanoporous and nanotubular metal oxides

Z. Su, W. Zhou, F. Jiang and M. Hong, J. Mater. Chem., 2012, 22, 535 DOI: 10.1039/C1JM13338A

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