Issue 34, 2011
From the journal:

Journal of Materials Chemistry

Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide†

Beom Joon Kim,‡a   Moon Sung Kang,‡b   Viet Hung Pham,c   Tran Viet Cuong,c   Eui Jung Kim,c   Jin Suk Chung,c   Seung Hyun Hur*c  and  Jeong Ho Cho*a  

* Corresponding authors

a Department of Organic Materials and Fiber Engineering, Soongsil University, Seoul, Korea
E-mail: jhcho94@ssu.ac.kr

b Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minnesota, USA

c School of Chemical Engineering and Bioengineering, University of Ulsan, Ulsan, Korea
E-mail: shhur@ulsan.ac.kr

Abstract

We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.

Graphical abstract: Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide

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Article information

DOI
https://doi.org/10.1039/C1JM11691F
Article type
Paper
Submitted
19 Apr 2011
Accepted
16 Jun 2011
First published
21 Jul 2011

J. Mater. Chem., 2011,21, 13068-13073

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Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide

B. J. Kim, M. S. Kang, V. H. Pham, T. V. Cuong, E. J. Kim, J. S. Chung, S. H. Hur and J. H. Cho, J. Mater. Chem., 2011, 21, 13068 DOI: 10.1039/C1JM11691F

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