Issue 19, 2011
From the journal:

CrystEngComm

Fabrication and optical properties of vertically aligned ZnSe nanowire arrays catalyzed by Ga and Ag

Yao Liang,*a   Yin Taoa  and  S. K. Hark*a  

* Corresponding authors

a Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
E-mail: yliang@phy.cuhk.edu.hk, skhark@phy.cuhk.edu.hk

Abstract

Vertically aligned ZnSe nanowire arrays have been grown on GaAs(111)B substrates by metal–organic chemical vapor deposition using Ga and Ag catalysts. Regardless of the catalysts, the nanowires are of zinc blende structure and grow along the 〈111〉B direction. However, the catalysts were found to affect the optical properties of the arrays. The dominant peak in the near-band-edge emission spectrum (10 K) of Ga-catalyzed nanowires is attributed to excitons bound to Ga donors and the corresponding peak in the spectrum of Ag-catalyzed nanowires to Ag acceptor complexes. Thus, Ga and Ag can serve both as an effective catalyst and a dopant for the growth of ZnSe nanowires.

Graphical abstract: Fabrication and optical properties of vertically aligned ZnSe nanowire arrays catalyzed by Ga and Ag

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Article information

DOI
https://doi.org/10.1039/C1CE05412K
Article type
Paper
Submitted
07 Apr 2011
Accepted
22 Jun 2011
First published
22 Jul 2011

CrystEngComm, 2011,13, 5751-5754

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Fabrication and optical properties of vertically aligned ZnSe nanowire arrays catalyzed by Ga and Ag

Y. Liang, Y. Tao and S. K. Hark, CrystEngComm, 2011, 13, 5751 DOI: 10.1039/C1CE05412K

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