Issue 3, 2011
From the journal:

Journal of Materials Chemistry

Atomic layer deposition of CdxZn1−xS films†

Jonathan. R. Bakke,a   Jukka T. Tanskanen,ac   Hee Joon Jung,b   Robert Sinclairb  and  Stacey F. Bent*a  

* Corresponding authors

a Department of Chemical Engineering, Stanford University, Stanford, California, USA
E-mail: sbent@stanford.edu
Fax: +1 650 723-9780
Tel: +1 650 723-0385

b Department of Materials Science and Engineering, Stanford University, Stanford, California, USA

c Department of Chemistry, University of Eastern Finland, Yliopistokatu 7, Joensuu, Finland

Abstract

Deposition of CdxZn1−xS has been demonstrated with atomic layer deposition (ALD) using diethylzinc (DEZn), dimethylcadmium (DMCd), and hydrogen sulfide as the precursors, and DFT calculations were performed to simulate the ALD process and the properties of the deposited films. The relative ratio of the pulses is varied for DMCd and DEZn to achieve different compositions over the spectrum from pure CdS to pure ZnS. Overall, the cadmium content in the films is higher than would be expected both as a function of pulse ratio and of temperature based on the growth rates of the binary films. At 150 °C pure ZnS shows almost pure cubic nature; however, the wurtzite content increases with the presence of cadmium until the film is approximately 10% wurtzite for pure CdS. Transmission electron microscopy (TEM) with high resolution confirms the coexistence of zincblende and wurtzite within grains due to the presence of stacking faults. The roughness of the films is a function of the composition, and the band gap and index of refraction can be finely tuned with composition.

Graphical abstract: Atomic layer deposition of CdxZn1−xS films

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Article information

DOI
https://doi.org/10.1039/C0JM02786C
Article type
Paper
Submitted
24 Aug 2010
Accepted
30 Sep 2010
First published
02 Nov 2010

J. Mater. Chem., 2011,21, 743-751

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Atomic layer deposition of CdxZn1−xS films

Jonathan. R. Bakke, J. T. Tanskanen, H. J. Jung, R. Sinclair and S. F. Bent, J. Mater. Chem., 2011, 21, 743 DOI: 10.1039/C0JM02786C

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