Issue 7, 2011
From the journal:

CrystEngComm

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays†

Luwei Sun,a   Haiping He,*a   Chao Liu,a   Yangfan Lua  and  Zhizhen Ye*a  

* Corresponding authors

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R.China
E-mail: hphe@zju.edu.cn, yezz@zju.edu.cn
Fax: +86-571-87952625
Tel: +86-571-87953139

Abstract

In this paper, two types of hybrid semiconductors made up of silicon nanowires and ZnO nanostructures, namely Si/ZnO core–shell nanowire arrays and ZnO quantum dots (QDs)-decorated Si nanowire arrays, have been prepared by combining metal-assisted wet-chemical etching and metal–organic chemical vapor deposition (MOCVD). We demonstrate that ZnO QDs and thin ZnO layers can be grown on Si nanowires in a controlled manner by varying growth parameters including working pressure and growth time. Meanwhile, porous silicon and porous Si/ZnO nanowire arrays have also been fabricated. The morphology and optical properties of both hybrid nanostructures have been carefully investigated for their potential applications in nanowire optoelectronics. A quantum confinement effect in ZnO QDs was confirmed by the blue-shifted photoluminescence. Porous Si/ZnO core–shell nanowires display a very broad emission band throughout the entire visible light range.

Graphical abstract: Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

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Supplementary files

Article information

DOI
https://doi.org/10.1039/C0CE00844C
Article type
Paper
Submitted
11 Nov 2010
Accepted
14 Jan 2011
First published
01 Feb 2011

CrystEngComm, 2011,13, 2439-2444

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Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

L. Sun, H. He, C. Liu, Y. Lu and Z. Ye, CrystEngComm, 2011, 13, 2439 DOI: 10.1039/C0CE00844C

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