Theoretical analysis of the potential distribution and transportation behavior of the ordered alkyl monolayer–silicon junction
Abstract
A theoretical approach to the determination of the potential distribution within an organic monolayer sandwiched metal-insulator-semiconductor junction has been proposed with two simplified models, e.g. static (capacitance) model and dynamic (resistance) model. Compared with the resistance model, the capacitance model has been confirmed to be more valid for determining the potential distribution of the system. Further, the transportation behavior of the system has been simulated with a modified electron-tunneling model.
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