Issue 3, 2000
From the journal:

Journal of Materials Chemistry

Jih-Jen Wu,a   Kuei-Hsien Chen,a   Cheng-Yen Wen,b   Li-Chyong Chen,b   Juen-Kai Wang,b   Yueh-Chung Yu,c   Chang-Wan Wangc  and  Erh-Kang Linc  

a Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
E-mail: jjwu@pub.iams.sinica.edu.tw

b Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan

c Institute of Physics, Academia Sinica, Taipei, Taiwan

Abstract

The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4∶SiH4 ratios as high as 150∶1. With H2 addition and at a CH4∶SiH4 ratio of 100∶1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

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Article information

DOI
https://doi.org/10.1039/A908523H
Article type
Paper
Submitted
26 Oct 1999
Accepted
04 Jan 2000
First published
16 Feb 2000

J. Mater. Chem., 2000,10, 783-787

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Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

J. Wu, K. Chen, C. Wen, L. Chen, J. Wang, Y. Yu, C. Wang and E. Lin, J. Mater. Chem., 2000, 10, 783 DOI: 10.1039/A908523H

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