This Article contains errors in Figure 4 where the hyperfine values for the donor separations along the [110] direction were calculated incorrectly. The correct Figure 4 appears below as Figure 1.
As a result, in the Results and Discussions section,
“From Fig. 4 we can see that Aij of a P-donor pair in silicon with one bound electron can vary from ~366.0 MHz to ~48.9 MHz within a 5 nm separation range”.
should read:
“From Fig. 4 we can see that Aij of a P-donor pair in silicon with one bound electron can vary from ~287.4 MHz to ~48.9 MHz within a 5 nm separation range”.
Additional information
The online version of the original article can be found at 10.1038/srep31830
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Wang, Y., Chen, CY., Klimeck, G. et al. Correction: Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques. Sci Rep 6, 38120 (2016). https://doi.org/10.1038/srep38120
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DOI: https://doi.org/10.1038/srep38120
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