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The Growth of P-type TlGaSe2(1−x) S2x Single Crystals

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Czechoslovak Journal of Physics Aims and scope

Abstract

TlGaSe2(1−x) S2x single crystals were grown by the modified Bridgman-Stockbarger method in our crystal growth laboratory. AIIIBIII C2 VI compounds are formed of elements from vertical groups of the periodic table (group III: Tl, Ga, In; group VI: Se, S, Te) and are classified into two types. The first type has a layer structure: TlGaSe2, TlGaS2 and TlInS2. The second type has a chained structure: TlInSe2, TlInTe2 and TlGaTe2. None of the grown crystals had cracks and voids on the surface. The freshly cleaved crystals had a mirror-like surface and there was no need for mechanical or chemical polishing treatments. By the hot probe technique, we have found that the crystals were of p-type. The ingots produced were single crystalline and the useful region of single crystal was 90% with steps of 10 K if changes were small, and with steps of 3 and 5 K if changes were large in the direct and indirect band gaps energies. The direct and indirect band gaps for TlGaSe2(1−x)S2x samples were calculated as a function of temperature.

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Authors and Affiliations

  1. Department of Physics, Faculty of Arts and Sciences, Atatürk University, 25240, Erzurum, Turkey

    B. Gürbulak, S. Duman & A. Ateş

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  1. B. Gürbulak
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  2. S. Duman
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  3. A. Ateş
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Gürbulak, B., Duman, S. & Ateş, A. The Growth of P-type TlGaSe2(1−x) S2x Single Crystals. Czechoslovak Journal of Physics 54, 857–866 (2004). https://doi.org/10.1023/B:CJOP.0000038594.44893.03

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