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A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes

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Abstract

We present preliminary results of a high order WENO scheme applied to deterministic computations for two dimensional formulation of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nanoscale active regions under applied bias. We treat the Boltzmann Transport equation in a spherical coordinate system for the wave-vector space. The problem is three dimensional in the wave-vector space and two dimensional in the physical space, plus the time variable driving to steady states. The new formulation avoids the singularity due to the spherical coordinate system.

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Authors and Affiliations

  1. Departament de Matemàtiques, ICREA, Universitat Autònoma de Barcelona, E-08193, Bellaterra, Spain

    José A. Carrillo

  2. Department of Mathematics, University of Texas, Austin, USA

    Irene M. Gamba

  3. Dipartimento di Matematica e Informatica, Università di Catania, Catania, Italy

    Armando Majorana

  4. Division of Applied Mathematics, Brown University, Providence, RI, 02912, USA

    Chi-Wang Shu

Authors
  1. José A. Carrillo
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  2. Irene M. Gamba
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  3. Armando Majorana
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  4. Chi-Wang Shu
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Carrillo, J.A., Gamba, I.M., Majorana, A. et al. A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes. Journal of Computational Electronics 2, 375–380 (2003). https://doi.org/10.1023/B:JCEL.0000011455.74817.35

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  • DOI: https://doi.org/10.1023/B:JCEL.0000011455.74817.35

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