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On High-Quality, Low Energy Built-In Self Test Preparation at RT-Level

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Abstract

Test power requirements for complex components are becoming stringent. The purpose of this paper is to reuse a recently proposed RT (Register Transfer) Level test preparation methodology to drive innovative Low-Energy (LE)/Low-Power (LP) BIST solutions for digital SoC (System on a Chip) embedded cores. RTL test generation is carried out through the definition of a reduced set of partially specified input vectors (masks), leading to a high correlation between multiple detection of RTL faults and single detection of likely physical defects. The methodology is referred as masked-based BIST, or m-BIST. BIST quality is evaluated considering three attributes: test effectiveness (TE), test length (TL) and test power (TP). LE BIST sessions are defined as short test sequences leading to high values of RT-level IFMB metrics and low-level Defects Coverage (DC). The energy and power of the BIST sessions, with and without mask forcing, is computed. It is shown that, by forcing vectors with the RTL masks, short BIST sessions, with low energy and with a comparable (or smaller) average power consumption, as compared to pseudo-random test, are derived. The usefulness of the methodology is ascertained using the VeriDOS simulation environment and modules of the CMUDSP and TORCH ITC'99 benchmark circuits.

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Authors and Affiliations

  1. IST/I, NESC-ID, R. Alves Redol, 9, 1000-029, Lisboa, Portugal

    M.B. Santos, I.C. Teixeira & J.P. Teixeira

  2. Univ. Politècnica de Catalunya (UPC), Avda. Diagonal 647, 08028, Barcelona, Spain

    S. Manich, L. Balado & J. Figueras

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  1. M.B. Santos
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  2. I.C. Teixeira
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  3. J.P. Teixeira
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  4. S. Manich
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  5. L. Balado
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  6. J. Figueras
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Santos, M., Teixeira, I., Teixeira, J. et al. On High-Quality, Low Energy Built-In Self Test Preparation at RT-Level. Journal of Electronic Testing 20, 345–355 (2004). https://doi.org/10.1023/B:JETT.0000039603.89172.2e

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