Abstract
Boron carbonitride and boron nitride films were grown by plasma-enhanced chemical vapor deposition using trimethylamineborane and its mixtures with ammonia, hydrogen, or helium. The effects of the starting-mixture composition and substrate temperature on the chemical composition of the deposits was studied by ellipsometry, scanning microscopy, IR spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy. The results indicate that the initial composition of the gas mixture, the nature of the activation gas, and substrate temperature play a key role in determining the deposition kinetics and the physicochemical properties of the deposits. Depending on these process parameters, one can obtain h-BN, h-BN + B4C, or BC x N y films.
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Kosinova, M.L., Rumyantsev, Y.M., Golubenko, A.N. et al. Chemical Composition of Boron Carbonitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition from Trimethylamineborane. Inorganic Materials 39, 366–373 (2003). https://doi.org/10.1023/A:1023227716045
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DOI: https://doi.org/10.1023/A:1023227716045