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Chemical Composition of Boron Carbonitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition from Trimethylamineborane

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Abstract

Boron carbonitride and boron nitride films were grown by plasma-enhanced chemical vapor deposition using trimethylamineborane and its mixtures with ammonia, hydrogen, or helium. The effects of the starting-mixture composition and substrate temperature on the chemical composition of the deposits was studied by ellipsometry, scanning microscopy, IR spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy. The results indicate that the initial composition of the gas mixture, the nature of the activation gas, and substrate temperature play a key role in determining the deposition kinetics and the physicochemical properties of the deposits. Depending on these process parameters, one can obtain h-BN, h-BN + B4C, or BC x N y films.

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Authors and Affiliations

  1. Siberian Division, Russian Academy of Sciences, Institute of Inorganic Chemistry, pr. Akademika Lavrent'eva 3, Novosibirsk, 630090, Russia

    M. L. Kosinova, Yu. M. Rumyantsev, N. I. Fainer, B. M. Ayupov, I. P. Dolgovesova, B. A. Kolesov & F. A. Kuznetsov

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    A. N. Golubenko

  3. Siberian Division, Russian Academy of Sciences, Boreskov Institute of Catalysis, pr. Akademika Lavrent'eva 5, Novosibirsk, 630090, Russia

    V. V. Kaichev

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  1. M. L. Kosinova
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  2. Yu. M. Rumyantsev
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  3. A. N. Golubenko
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Kosinova, M.L., Rumyantsev, Y.M., Golubenko, A.N. et al. Chemical Composition of Boron Carbonitride Films Grown by Plasma-Enhanced Chemical Vapor Deposition from Trimethylamineborane. Inorganic Materials 39, 366–373 (2003). https://doi.org/10.1023/A:1023227716045

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