Abstract
This paper deals with the behaviour of two Keggin-type heteropolyanions: SiMo12O4− 40 and SiW12O4− 40 dissolved in aqueous acidic solution, towards semiconductors, at rest potential. Two III-V semiconductors are studied, GaAs and InP. At the material/solution interface, GaAs undergoes an oxidation/dissolution process while the heteropolyanions are reduced. These reactions lead to the growth of a film on the GaAs surface, its composition was determined by X-ray photoelectron spectroscopy. In the dark, at the InP/solution interface no reaction occurs whatever the heteropolyanion used. However, in the presence of SiMo12O4− 40, when an n-type InP semiconductor is illuminated (hυ>1.35 eV) the heteropolyanions are reduced and the photodissolution of the material is achieved, no surface film is present on the etched surface. The difference of behaviour between GaAs and InP is primarily due to the difference of the positions of the semiconductor energy-band edges with respect to the first redox potential of the heteropolyanions.
Similar content being viewed by others
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Quennoy, A., Rothschild, A., Gérard, I. et al. A New Application for Heteropolyanions: Etching of III-V Semiconductor Compounds. Journal of Cluster Science 13, 313–331 (2002). https://doi.org/10.1023/A:1020594831098
Issue Date:
DOI: https://doi.org/10.1023/A:1020594831098