Simplified tight-binding model for conductance calculation with phonon scattering for atomic junctions

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Abstract

Intrigued by the high demand of fast design and development of nanoscale electronic devices, electronic transport across atomic dimensions becomes an important theoretical and computational problem. In this paper we present a tight-binding based model specially tailed for calculating realistic tunneling structures with scattering region dimensions of several nanometers. The proposed model allows for a proper treatment of the electron–phonon coupling effects in a tractable manner. By greatly reducing the complexity of the phonon-involved problem down to a quadratic level, transmission calculation for large-scale systems, including both planar structures and quantum wire structures, becomes practically feasible.

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Acknowledgements

This program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA). The Australian Government, through ARENA, is supporting Australian research and development in solar photovoltaic and solar thermal technologies to help solar power become cost competitive with other energy sources.

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