Microelectronics ReliabilityVolume 67, December 2016, Page 159CorrigendumCorrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69]Author links open overlay panelWeiliang Wang a b, Karim Khan b, Xingye Zhang c, Haiming Qin b, Jun Jiang b, Lijing Miao b, Kemin Jiang b, Pengjun Wang a, Mingzhi Dai b, Junhao Chu dShow moreShareCitehttps://doi.org/10.1016/j.microrel.2016.09.003Previous article in issueNext article in issueRecommended articlesCited by (0)View Abstract