Elsevier

Microelectronics Reliability

Volume 67, December 2016, Page 159
Microelectronics Reliability

Corrigendum
Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69]

https://doi.org/10.1016/j.microrel.2016.09.003

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