Multiple high-voltage pulse stressing of conventional thick-film resistors☆
Introduction
In the production of sensitive and reliable up-to-date communication systems stability and precise resistance values of widely utilized conventional thick-film resistors are of great importance. Different conditions of their application are inducing the need to investigate their behaviour under stress, especially high-voltage pulse stress. Several papers dealt with physically different problem – behavioural analysis of low-ohmic thick-film resistors, the so-called thick-film surge resistors, which are being used in telecom systems as protection under extreme working conditions [1], [2], but little attention has been paid to performances of conventional thick-film resistors used in telecom applications subjected to high-voltage pulse stressing [3], [4], [5], [6], [7], especially related to degradation phenomena. Since there is a general interest in noise measurements as means of thick resistive film quality evaluation [8], [9], in one of our previous papers [10] we have presented results from the study of high-voltage pulse stressing effects on resistance and low-frequency noise of conventional thick-film resistors using test samples with different sheet resistances and different geometries. In this paper, the results of investigation of performances of thick-film resistors after multiple high-voltage pulse (MHVP) stressing, using resistance measurements as well as measurements of low-frequency noise parameters – current noise spectrum and noise index, are presented. Experiments – materials, test resistors and terms of MHVP stressing and measurements, are described in Section 2. Experimental results and discussion are given in Section 3. Also, during the performed experiment certain number of test resistors failed and, in Section 3, observed progressive resistor degradations due to high-voltage pulse stressing that led to catastrophic failure are described.
Section snippets
Materials and test resistors
Performance analysis of thick-film resistors subjected to high-voltage pulse treatment was carried out on a group of conventional thick-film resistors (Fig. 1) with identical geometries (1 × 3 mm2). Test samples were formed on alumina (96% Al2O3) substrates using conventional screen-printing techniques. Resistors were realized using commercially available resistor compositions from HS80 series (DuPont) with nominal sheet resistances of 1 kΩ/sq (8029), 10 kΩ/sq (8039) and 100 kΩ/sq (8049) in
Degradation of resistors during of MHVP stressing
The results of our experiments obtained by resistance, noise index and current noise spectrum measurements for thick-film resistors with identical geometries (1 × 3 mm2) and nominal sheet resistances of 1, 10 and 100 kΩ/sq that were subjected to MHVP stressing are given in Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9. Since standard thick-film resistor tolerance is up to 1% for most applications in up-to-date telecom equipment, for analysis purposes we have declared that significant
Conclusion
In this paper, the results obtained from resistance, noise index and current noise spectrum measurements performed on three groups of test resistors with identical geometries (1 × 3 mm2), based on commercially available thick-film resistor compositions with sheet resistances of 1, 10 and 100 kΩ/sq and subjected to MHVP stressing are given. For test resistors based on composition with sheet resistance 1 kΩ/sq, expected lack of micro-structural changes is observed as a consequence of the present
Acknowledgement
This research was supported by the Serbian Ministry of Science and Environmental Protection (Contracts TR-6116B and TR-6151B).
References (15)
- et al.
Advanced electrical and stability characterization of untrimmed and variously trimmed thick-film and LTCC resistors
Microelectron Reliab
(2006) - et al.
On 1/f noise in RuO2-based thick resistive films
Solid-State Electron
(1986) - et al.
High-voltage pulse stressing of thick-film resistors and noise
Microelectron Reliab
(2003) - et al.
Thick-film resistor quality indicator based on noise index measurements
Microelectron J
(1999) - et al.
Evaluation of thick-film structural parameters based on noise index measurements
Microelectron Reliab
(2001) Low ohm thick film resistors for surge protection
Adv Microelectron
(1996)Low ohm resistor series for optimum performance in high voltage surge applications
Microelectron Int
(1997)
Cited by (4)
Statistical Description of High-Voltage Pulse Trimming of RuO<inf>2</inf> and Bi<inf>2</inf>Ru<inf>2</inf>O<inf>7</inf>-Based Thick Resistive Films
2020, IEEE Transactions on Electron DevicesInfluence of HVP trimming on primary parameters of thick resistive films
2017, Journal of Materials Science: Materials in ElectronicsEffects of high voltage pulse trimming on structural properties of thick-film resistors
2017, Science of SinteringNoise and resistance as indicators of HVP stressing impact on performances of conventional TFRs
2008, "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"
- ☆
An earlier version of this paper was published in the Proceedings of the 25th International Conference on Microelectronics – MIEL 2006, Belgrade, 14–17 May 2006, pp. 623–625.