Elsevier

Microelectronics Reliability

Volume 47, Issue 12, December 2007, Pages 2242-2248
Microelectronics Reliability

Multiple high-voltage pulse stressing of conventional thick-film resistors

https://doi.org/10.1016/j.microrel.2006.11.017Get rights and content

Abstract

In this paper, results from a study of multiple high-voltage pulse (MHVP) stressing effects on resistance and low-frequency noise of thick-film resistors based on resistor compositions with sheet resistances of 1, 10 and 100 kΩ/sq are presented. For experimental purposes, a series of thick-film test resistors with identical geometries were realized and exhibited to two types of tests: multiple series of 10 pulses with increasing amplitudes from the 0.5 to 4.0 kV range and multiple series of 10 pulses with constant 3 kV and 4.5 kV amplitudes. Obtained experimental results were analyzed and correlation between resistance and low-frequency noise changes with resistor degradation due to MHVP stressing was observed. Comparing the resistance and noise index changes it is shown that low-frequency noise parameters are more sensitive to this kind of resistor stressing than resistance. During high-voltage pulse stressing, certain number of resistors failed and progressive resistor degradation that led to catastrophic failure is also presented in this paper.

Introduction

In the production of sensitive and reliable up-to-date communication systems stability and precise resistance values of widely utilized conventional thick-film resistors are of great importance. Different conditions of their application are inducing the need to investigate their behaviour under stress, especially high-voltage pulse stress. Several papers dealt with physically different problem – behavioural analysis of low-ohmic thick-film resistors, the so-called thick-film surge resistors, which are being used in telecom systems as protection under extreme working conditions [1], [2], but little attention has been paid to performances of conventional thick-film resistors used in telecom applications subjected to high-voltage pulse stressing [3], [4], [5], [6], [7], especially related to degradation phenomena. Since there is a general interest in noise measurements as means of thick resistive film quality evaluation [8], [9], in one of our previous papers [10] we have presented results from the study of high-voltage pulse stressing effects on resistance and low-frequency noise of conventional thick-film resistors using test samples with different sheet resistances and different geometries. In this paper, the results of investigation of performances of thick-film resistors after multiple high-voltage pulse (MHVP) stressing, using resistance measurements as well as measurements of low-frequency noise parameters – current noise spectrum and noise index, are presented. Experiments – materials, test resistors and terms of MHVP stressing and measurements, are described in Section 2. Experimental results and discussion are given in Section 3. Also, during the performed experiment certain number of test resistors failed and, in Section 3, observed progressive resistor degradations due to high-voltage pulse stressing that led to catastrophic failure are described.

Section snippets

Materials and test resistors

Performance analysis of thick-film resistors subjected to high-voltage pulse treatment was carried out on a group of conventional thick-film resistors (Fig. 1) with identical geometries (1 × 3 mm2). Test samples were formed on alumina (96% Al2O3) substrates using conventional screen-printing techniques. Resistors were realized using commercially available resistor compositions from HS80 series (DuPont) with nominal sheet resistances of 1 kΩ/sq (8029), 10 kΩ/sq (8039) and 100 kΩ/sq (8049) in

Degradation of resistors during of MHVP stressing

The results of our experiments obtained by resistance, noise index and current noise spectrum measurements for thick-film resistors with identical geometries (1 × 3 mm2) and nominal sheet resistances of 1, 10 and 100 kΩ/sq that were subjected to MHVP stressing are given in Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9. Since standard thick-film resistor tolerance is up to 1% for most applications in up-to-date telecom equipment, for analysis purposes we have declared that significant

Conclusion

In this paper, the results obtained from resistance, noise index and current noise spectrum measurements performed on three groups of test resistors with identical geometries (1 × 3 mm2), based on commercially available thick-film resistor compositions with sheet resistances of 1, 10 and 100 kΩ/sq and subjected to MHVP stressing are given. For test resistors based on composition with sheet resistance 1 kΩ/sq, expected lack of micro-structural changes is observed as a consequence of the present

Acknowledgement

This research was supported by the Serbian Ministry of Science and Environmental Protection (Contracts TR-6116B and TR-6151B).

References (15)

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An earlier version of this paper was published in the Proceedings of the 25th International Conference on Microelectronics – MIEL 2006, Belgrade, 14–17 May 2006, pp. 623–625.

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