Uniaxial magnetic anisotropy of cobalt thin films on different substrates using CW-MOKE technique

https://doi.org/10.1016/j.jmmm.2014.06.061Get rights and content

Highlights

  • Deposited cobalt thin films on different substrates and annealed at 300 °C.

  • Characterized as-grown and annealed films by GIXRD, AFM and MOKE.

  • Uniaxial magnetic anisotropy observed for all the samples.

  • Decrease in anisotropy on annealing may be due to release of stress during deposition.

Abstract

Cobalt thin films were deposited on GaAs, Si and Glass substrates by RF-magnetron sputtering. The structure was studied using atomic force microscopy, X-ray reflectivity and grazing incidence X-ray diffraction. Magnetic properties were determined with the magneto-optic Kerr effect. The deposited films have in-plane uniaxial anisotropy and after annealing the anisotropy reduces. The reduction in anisotropy may be due to release of stress and the remaining anisotropy after annealing may be due to shape anisotropy of the particulates.

Introduction

Magnetic properties of thin films are inherently related to the structure and morphology of the films. From the application viewpoint, magnetic anisotropy is one of the most important properties of the magnetic materials [1]. Depending upon the type of application e.g. permanent magnets, storage media or magnetic cores in transformers and magnetic recording heads, materials with high, medium or low magnetic anisotropy are required. In addition, due to extensive development in semiconductor technology, the properties of magnetic metal films especially of nanometer scale structures on semiconductor substrates have gained more importance. The magnetic and interfacial properties of thin films of cobalt (Co) on different substrates (e.g. Pt, Ge, SiO2, GaAs, glass, MgO, Si, Cu and Pd) have been reported in the literature, but the emphasis have been on to Cu, Pt and Si substrates because of the possibility of growth of FCC Co in the case of Cu, perpendicular anisotropy in the case of Pt or Pd substrates and studies of growth on semiconductors for spintronics devices [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13]. The effect of surface roughness, thickness dependence, oblique deposition etc. has been extensively studied [8], [10], [11], [12], [13], [14]. Co thin films have been deposited by metal organic chemical vapor deposition (MOCVD), DC and RF magnetron sputtering, thermal evaporation, e-beam evaporation and molecular beam epitaxy [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14]. Uniaxial magnetic anisotropy in Co thin films on glass, Si, MgO, etc. has also been observed [8], [9], [11], [12], [13], [14]. Effect of surface roughness on the magnetization reversal in Co thin films on Si has been studied and it has been reported that increasing the roughness changes the magnetization reversal process from the magnetization rotation to a combination of magnetization rotation and domain wall motion [11]. Similarly, for studies of Co films on rippled Si substrates, the strong uniaxial anisotropy has been reported with its easy axis along a direction normal to the ripple wave vector [7]. Uniaxial magnetic anisotropy has been studied in Co films on glass using MOKE technique and the shape of the substrate is reported as the probable cause for the rotation of the easy axis of the magnetization for amorphous or polycrystalline films [4]. The correlation between micro-structure and magnetic properties has been studied and roughness is found to lower the uniaxial anisotropy and raise the coercivity [12]. However, in spite of the significant research effort, much of the observed magnetic behavior remains unexplained, including a detailed understanding of the magnetic anisotropy and the change from perpendicular to in plane magnetization. The reason for this surely arises from the large sensitivity of the magnetic anisotropy to structural, morphological, and chemical details at the interfaces, which is at the origin of a variety of experimental results due to a lack of complete and accurate control of the fabrication parameters. Therefore, it becomes important to study the effect of substrate on the magnetic properties of the sample. To study the effect of substrate on the magnetic properties of the thin film, we deposited thin films on different substrates under same deposition conditions. The earlier studies are independent studies mostly with one substrate at a time and there are very few reports devoted to the magnetic properties of thin films on two or more substrates. The magneto-optic Kerr effect (MOKE) has become a standard tool for the study of magnetic ultrathin films and magnetic multi-layers due to its simple experimental setup, ability for making in-situ measurements and high sensitivity down to monolayer resolution [2], [4], [6], [8], [14]. In the present work, we have studied the in-plane magnetic anisotropy of cobalt thin film on different substrates by MOKE technique. We have deposited Co thin films of 50 nm thickness on different substrates simultaneously and have shown that anisotropy is due to stress during deposition and with annealing, the anisotropy decreases which may be due to release of stress and the remanant anisotropy is due to shape anisotropy of the particulates.

Section snippets

Experimental

Uniaxial magnetic anisotropy was studied in cobalt thin films using continuous wave (CW) magneto-optic Kerr effect (MOKE) technique. The MOKE setup consists of a monochromatic light source (intensity stabilized He-Ne laser) followed by a polarizer to select the incident polarization, a photo-elastic modulator (PEM), the sample in a magnetic field between the poles of an electromagnet, an analyzer and the photo detector. The photodiode signal is fed to the Lock-in amplifier (SR830). The MOKE

Results and discussion

Fig. 1 shows the XRR data of as deposited Co film grown on GaAs wafer. The reflectivity profile was fitted using Parratt׳s formalism [15]. The best fitting was obtained by considering three layer structure consisting (i) native oxide layer of 2.5 nm thickness on GaAs wafer, (ii) 45 nm thick Co layer and (iii) 4.7 nm top oxide layer. The topmost layer shows somewhat lower electron density as compared to thick Co underlayer. This topmost layer can be due to formation of CoO because of exposure to

Conclusion

Cobalt thin films were deposited on glass, silicon and GaAs by RF magnetron sputtering. In plane uniaxial magnetic anisotropy was observed in cobalt thin films using MOKE technique. AFM studies show that the deposited films are of particulate nature. The particulate nature and the stress induced during deposition may be the reason for the anisotropic magnetic behavior of these films. On annealing the decrease in magnetic anisotropy confirms that the contribution of the stress is dominant cause

Acknowledgments

The authors thank Mr. Ayukt Pathak and Mrs. Shradha Tiwari, LSED, RRCAT for the Lab view based MOKE software and Dr. (Mrs.) Archna Sagdeo, ISUD, RRCAT for their critical comments on the manuscript and Dr. H.S. Rawat, LPAS, RRCAT for his encouragement and support in this work. VS is thankful to Mr. S. Khan for his help in data analysis.

References (16)

  • K. Tobari et al.

    J. Magn. Magn. Mater.

    (2012)
  • D. Kumar et al.

    J. Magn. Magn. Mater.

    (2007)
  • O. Benamara et al.

    J. Cryst. Growth

    (2010)
  • M.A. Paranjape et al.

    Thin Solid Films

    (2002)
  • W.B. Zeper et al.

    J. Appl. Phys

    (1989)
  • T. Hirahara, Yuki Saisyu et al.

    J. Appl. Phys

    (2011)
  • T. Kushel et al.

    J. Appl. Phys.

    (2011)
  • R. Gupta et al.

    J. Appl. Phys.

    (2010)
There are more references available in the full text version of this article.

Cited by (9)

  • Bulk defects induced coercivity modulation of Co thin film based on a Ta/Bi double buffer layer

    2020, Journal of Magnetism and Magnetic Materials
    Citation Excerpt :

    One way is controlling the size and moment of magnetic domain through structural design. For example, Shukla et al. tuned the coercivity of Co thin films with different interface roughness and grain size between the substrates (GaAs, Si, glass) and the Co films [21]. Zhao et al. introduced intermediate layers (Ta and Pt) to adjust the exchange coupling strength between the hard/soft magnetic layers, and in turn regulate the coercivity of the L10-FePt/NM/[CoNi]5 film [22].

  • Study of roughness effect in Fe and Co thin films prepared by plasma magnetron sputtering

    2019, Physica B: Condensed Matter
    Citation Excerpt :

    Other possible effects including temperature of measurement or temperature of sample deposition are ruled out, as all our thin film fabrications and measurements took place in a temperature-controlled environment. We also made sure the experiments were carried out in such way that minimizes some other common reasons that could explain the observed effects, such as shadow deposition [26] and tensile or compressive stress [27,28]. Within this study, we limited our investigation to atomic force measurement of substrate roughness and we only focused on samples synthesis, magnetic properties and micromagnetics.

  • Investigation of nanocrystalline thin cobalt films thermally evaporated on Si(100) substrates

    2017, Journal of Magnetism and Magnetic Materials
    Citation Excerpt :

    Cobalt is also used in microelectronic devices due to its low electrical resistivity and small lattice mismatch with silicon [16–18]. Nanocrystalline cobalt films deposited on silicon substrates are widely studied in recent years [16–27]. In the present work, we report a quantitative investigation of the morphological and magnetic domain structures of 100 nm thick cobalt films thermally evaporated on naturally oxidized Si(100) substrates.

View all citing articles on Scopus

Corresponding author at: Laser Physics Applications Section, R&D Block “A”, Raja Ramanna Centre for Advanced Technology, Indore 452013 (Madhya Pradesh), India. Tel.: +91 731 2488378; mobile: +91 9575832401.

View full text