New developments in MEMS using SiC and TiNi shape memory alloy materials

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Abstract

Developments in microelectromechanical systems using SiC and TiNi shape memory alloy materials have been made between 1995 and 1997. Major advancements were made in the deposition of 3C-SiC on large-area substrates, the development of a SiC-based surface micromachining process, developments of SiC on insulator technologies, materials properties studies of both SiC and TiNi shape memory materials, and the fabrication of SiC and TiNi shape memory alloy-based micromechanical devices.

References (53)

  • M Mehregany et al.

    Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films

    IEEE Trans Elect Dev

    (1997)
  • Y Yamaguchi et al.

    Properties of heteroepitaxial 3C-SiC films

  • K Murooka et al.

    Improvement of the Young's modulus of SiC film by low pressure chemical vapor deposition with B2H6 gas

    Appl Phys Lett

    (1996)
  • C Su et al.

    Stresses in chemical vapor deposited expitaxial 3C-SiC membranes

    J Appl Phys

    (1995)
  • C Su et al.

    Elastic and anelastic properties of chemical vapor deposited epitaxial 3C-SiC

    J Appl Phys

    (1995)
  • J Shor et al.

    Photoelectrochemical conductivity selective etch stops for SiC

    Appl Phys Lett

    (1992)
  • J Shor et al.

    Dopant-selective etch stops in 6H and 3C-SiC

    J Appl Phys

    (1997)
  • P Yih et al.

    Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas

    J Electrochem Soc

    (1995)
  • N Dartnell et al.

    Reactive ion etching of silicon carbide

    Vacuum

    (1995)
  • A Fleischman et al.

    Polycrystalline silicon carbide for surface micromachining

  • G Kroetz et al.

    Silicon carbide as a mechanical material

  • J Camassel et al.

    Investigation of structural, optical, and electrical properties of 3C-SiC deposited on SOI

  • R Zeirmann et al.

    A high temperature pressure sensor with β-SiC piezoresistors on SOI substrates

  • Q Tong et al.

    Silicon carbide wafer bonding

    J Electrochem Soc

    (1995)
  • K Vinod et al.

    A novel SiC on insulator technology using wafer bonding

  • K Muramatsu et al.

    Preparation of SiC thin film thermistor by hot wall epitaxy

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