Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces
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Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals
2021, Applied Surface ScienceMetalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
2018, Progress in Crystal Growth and Characterization of MaterialsCitation Excerpt :Hence, it is possible, within certain limits, to control the domain content and the associated step types by application of suitable preparation routes within the MOVPE environment [38]. The surface preparation can be monitored in situ since RA spectra of Si(001) surfaces have been studied in great detail [75–89]. A wonderful example of the successful interplay between theory and experiment is the work by Palummo et al. [75].
Surface preparation of Si(1 0 0) by thermal oxide removal in a chemical vapor environment
2011, Journal of Crystal GrowthCitation Excerpt :To obtain conclusive results regarding the actual deoxidation mechanism in the CVD environment we plan several experiments involving alternative process gases and process gas compositions for Si(1 0 0) surface preparation as well as in situ process analysis by mass spectroscopy for detection of the chemical products of the deoxidation reaction [33]. Indications for an active role of hydrogen might be obtained by Fourier-transform infrared spectroscopy [35], optical in situ characterization [37], or even STM [38]. If laterally inhomogeneous oxide removal processes such as void formation in UHV also determine the deoxidation in the CVD environment, surface sensitive microscopic investigations by scanning Auger [29] or low-energy electron [28] techniques could provide direct evidence.
RAS: An efficient probe to characterize Si(0 0 1)-(2 × 1) surfaces
2006, Surface Science